VBT2080S-E3/8W Vishay General Semiconductor
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| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.7 EUR |
| 10+ | 1.41 EUR |
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Technische Details VBT2080S-E3/8W Vishay General Semiconductor
Description: DIODE SCHOTTKY 80V 20A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A, Current - Reverse Leakage @ Vr: 700 µA @ 80 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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VBT2080S-E3/8W | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE SCHOTTKY 80V 20A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A Current - Reverse Leakage @ Vr: 700 µA @ 80 V |
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