VBT3080S-M3/4W Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 30A TO263AB
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Technische Details VBT3080S-M3/4W Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 30A TO263AB, Current - Reverse Leakage @ Vr: 1 mA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A, Voltage - DC Reverse (Vr) (Max): 80 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 30A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Weitere Produktangebote VBT3080S-M3/4W
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| VBT3080S-M3/4W | Hersteller : Vishay Semiconductors |
Schottky Diodes & Rectifiers 30A,80V,TRENCH SKY RECT. |
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