VFT2080C-E3/4W Vishay General Semiconductor
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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.29 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.44 EUR |
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Technische Details VFT2080C-E3/4W Vishay General Semiconductor
Description: DIODE ARR SCHOT 80V 10A ITO220AB, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: ITO-220AB, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A, Current - Reverse Leakage @ Vr: 600 µA @ 80 V.
Weitere Produktangebote VFT2080C-E3/4W
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VFT2080C-E3/4W | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE ARR SCHOT 80V 10A ITO220ABPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A Current - Reverse Leakage @ Vr: 600 µA @ 80 V |
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