VFT3080S-E3/4W Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE SCHOTTKY 80V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
auf Bestellung 1970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.02 EUR |
| 11+ | 1.66 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.10 EUR |
| 1000+ | 0.89 EUR |
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Technische Details VFT3080S-E3/4W Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 30A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-220-3, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A, Current - Reverse Leakage @ Vr: 1 mA @ 80 V.
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