VI20150C-M3/4W Vishay General Semiconductor
auf Bestellung 949 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.31 EUR |
| 10+ | 1.87 EUR |
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Technische Details VI20150C-M3/4W Vishay General Semiconductor
Description: DIODE ARR SCHOT 150V 10A TO262AA, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-262AA, Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A, Current - Reverse Leakage @ Vr: 150 µA @ 150 V, Qualification: AEC-Q101.
Weitere Produktangebote VI20150C-M3/4W nach Preis ab 0.95 EUR bis 2.31 EUR
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VI20150C-M3/4W | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE ARR SCHOT 150V 10A TO262AAPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-262AA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 150 V Qualification: AEC-Q101 |
auf Bestellung 7426 Stücke: Lieferzeit 10-14 Tag (e) |
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