VKM60-01P1
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auf Bestellung 33 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details VKM60-01P1
Description: MOSFET 4N-CH 100V 75A ECO-PAC2, Packaging: Box, Package / Case: ECO-PAC2, Mounting Type: Through Hole, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 75A, Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V, Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 4mA, Supplier Device Package: ECO-PAC2, Part Status: Not For New Designs.
Weitere Produktangebote VKM60-01P1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| VKM60-01P1 |
 HiperFET Full-Bridge 100V 75A 25mOhm ECO-PAC2 -40...+150C Силові MOSFET-модулі |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
| VKM60-01P1 | IXYS |
Description: MOSFET 4N-CH 100V 75A ECO-PAC2 Packaging: Box Package / Case: ECO-PAC2 Mounting Type: Through Hole Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: ECO-PAC2 Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
VKM60-01P1 | IXYS |
Discrete Semiconductor Modules MOSFET H-BRIDGE 100V 63 AMP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH |
| VKM60-01P1 |
|
HiperFET Full-Bridge 100V 75A 25mOhm ECO-PAC2 -40...+150C Силові MOSFET-модулі
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VKM60-01P1 |
Hersteller: IXYS
Description: MOSFET 4N-CH 100V 75A ECO-PAC2
Packaging: Box
Package / Case: ECO-PAC2
Mounting Type: Through Hole
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 75A
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ECO-PAC2
Part Status: Not For New Designs
Description: MOSFET 4N-CH 100V 75A ECO-PAC2
Packaging: Box
Package / Case: ECO-PAC2
Mounting Type: Through Hole
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 75A
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ECO-PAC2
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| VKM60-01P1 |
|
Hersteller: IXYS
Discrete Semiconductor Modules MOSFET H-BRIDGE 100V 63 AMP
Discrete Semiconductor Modules MOSFET H-BRIDGE 100V 63 AMP
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH