VMO60-05F Ixys Semiconductor GmbH


Hersteller: Ixys Semiconductor GmbH
N-CH HDMOS 500В 60А 65mOm 250 нсек
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Technische Details VMO60-05F Ixys Semiconductor GmbH

Description: MOSFET N-CH 500V 60A TO240AA, Packaging: Box, Package / Case: TO-240AA, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 500mA, 10V, Power Dissipation (Max): 590W (Tc), Vgs(th) (Max) @ Id: 4V @ 24mA, Supplier Device Package: TO-240AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 405 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V.

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VMO60-05F VMO60-05F Hersteller : IXYS Description: MOSFET N-CH 500V 60A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 500mA, 10V
Power Dissipation (Max): 590W (Tc)
Vgs(th) (Max) @ Id: 4V @ 24mA
Supplier Device Package: TO-240AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 405 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
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VMO60-05F VMO60-05F Hersteller : IXYS ixys_vmo60-05f-1548023.pdf Discrete Semiconductor Modules 60 Amps 500V
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VMO60-05F Hersteller : IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 60A; TO240AA; Idm: 240A; 590W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 60A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 240A
Power dissipation: 590W
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 405nC
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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