Produkte > VMO

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
VMO1200-01FIXYSDiscrete Semiconductor Modules 1200 Amps 100V
auf Bestellung 221 Stücke:
Lieferzeit 14-28 Tag (e)
VMO1200-01FLittelfuseTrans MOSFET N-CH 100V 1.22KA 4-Pin Case Y3 Box
Produkt ist nicht verfügbar
VMO1200-01FIXYSDescription: MOSFET N-CH 100V 1220A Y3-LI
auf Bestellung 153 Stücke:
Lieferzeit 21-28 Tag (e)
1+448.5 EUR
10+ 446.96 EUR
VMO1200-01FLittelfuseTrans MOSFET N-CH 100V 1.22KA Automotive 4-Pin Case Y3 Box
Produkt ist nicht verfügbar
VMO1200-01FIXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 100V; 1.22kA; Y3-Li; PolarHT™; 1.71uC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 1.22kA
Case: Y3-Li
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.25mΩ
Technology: PolarHT™
Kind of channel: enhanced
Gate charge: 1.71µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
VMO1200-01FIXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 100V; 1.22kA; Y3-Li; PolarHT™; 1.71uC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 1.22kA
Case: Y3-Li
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.25mΩ
Technology: PolarHT™
Kind of channel: enhanced
Gate charge: 1.71µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
VMO150-01P1IXYSDescription: MOSFET N-CH 100V 165A ECO-PAC2
Produkt ist nicht verfügbar
VMO1600-02PIXYSDescription: MOSFET N-CH 200V 1900A Y3-LI
Produkt ist nicht verfügbar
VMO1600-02P Modul
Produktcode: 57784		Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
VMO40-05P1IXYSDescription: MOSFET N-CH ECO-PAC2
Produkt ist nicht verfügbar
VMO400-02IXYS.
auf Bestellung 19 Stücke:
Lieferzeit 21-28 Tag (e)
VMO400-02IXYS07+;
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
VMO400-02FIXYSJ4-4
auf Bestellung 118 Stücke:
Lieferzeit 21-28 Tag (e)
VMO400-02F
Produktcode: 169604		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
VMO400-02FIXYS420A/MOSFET
auf Bestellung 83 Stücke:
Lieferzeit 21-28 Tag (e)
VMO400-02FLIXYSJ4-6 WL
auf Bestellung 169 Stücke:
Lieferzeit 21-28 Tag (e)
VMO400-02FL/11
auf Bestellung 80 Stücke:
Lieferzeit 21-28 Tag (e)
VMO400-02FL/13
auf Bestellung 43 Stücke:
Lieferzeit 21-28 Tag (e)
VMO400-02FLZ
auf Bestellung 43 Stücke:
Lieferzeit 21-28 Tag (e)
VMO440-02
auf Bestellung 5 Stücke:
Lieferzeit 21-28 Tag (e)
VMO440-02F
auf Bestellung 25 Stücke:
Lieferzeit 21-28 Tag (e)
VMO440-02FL
Produktcode: 166873		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
VMO440-02FLIXYSJ4-4 WL
auf Bestellung 752 Stücke:
Lieferzeit 21-28 Tag (e)
VMO550-01FIXYSDescription: MOSFET N-CH 100V 590A Y3-DCB
Packaging: Box
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 590A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 500mA, 10V
Power Dissipation (Max): 2200W (Tc)
Vgs(th) (Max) @ Id: 6V @ 110mA
Supplier Device Package: Y3-DCB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2000 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50000 pF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)
1+900.41 EUR
VMO550-01FIXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 590A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 2.1mΩ
Pulsed drain current: 2.36kA
Power dissipation: 2.2kW
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 2µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
VMO550-01FIXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 590A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 2.1mΩ
Pulsed drain current: 2.36kA
Power dissipation: 2.2kW
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 2µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
VMO580-02FIXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 200V; 580A; Y3-Li; HiPerFET™; 2.75uC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 580A
Case: Y3-Li
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 3.8mΩ
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 2.75µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
VMO580-02FIXYSDescription: MOSFET N-CH 200V 580A Y3-LI
Packaging: Bulk
Package / Case: Y3-Li
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 430A, 10V
Vgs(th) (Max) @ Id: 4V @ 50mA
Supplier Device Package: Y3-Li
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 2750 nC @ 10 V
Produkt ist nicht verfügbar
VMO60-05FIXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 500V; 60A; TO240AA; Idm: 240A; 590W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 60A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 240A
Power dissipation: 590W
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 405nC
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
VMO60-05FIXYSDescription: MOSFET N-CH 500V 60A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 500mA, 10V
Power Dissipation (Max): 590W (Tc)
Vgs(th) (Max) @ Id: 4V @ 24mA
Supplier Device Package: TO-240AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 405 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Produkt ist nicht verfügbar
VMO60-05FIxys Semiconductor GmbHN-CH HDMOS 500В 60А 65mOm 250 нсек
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
VMO60-05FIXYSDiscrete Semiconductor Modules 60 Amps 500V
Produkt ist nicht verfügbar
VMO60-05FIXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 500V; 60A; TO240AA; Idm: 240A; 590W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 60A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 240A
Power dissipation: 590W
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 405nC
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
VMO650-01FIXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 690A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Pulsed drain current: 2.78kA
Power dissipation: 2.5kW
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 2.3µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
VMO650-01FLittelfuseTrans MOSFET N-CH 100V 690A Automotive 4-Pin Y3-DCB
Produkt ist nicht verfügbar
VMO650-01FIXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 690A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Pulsed drain current: 2.78kA
Power dissipation: 2.5kW
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 2.3µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
VMO650-01FIXYSDescription: MOSFET N-CH 100V 690A Y3-DCB
Packaging: Bulk
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 690A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 500mA, 10V
Power Dissipation (Max): 2500W (Tc)
Vgs(th) (Max) @ Id: 6V @ 130mA
Supplier Device Package: Y3-DCB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 59000 pF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
1+559.94 EUR
VMO80-05P1IXYSDescription: MOSFET N-CH ECO-PAC2
Produkt ist nicht verfügbar
VMOB70ACRINATO-55
auf Bestellung 26 Stücke:
Lieferzeit 21-28 Tag (e)