VMO580-02F
Hersteller:
Силові MOSFET-модулі
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Technische Details VMO580-02F
Description: MOSFET N-CH 200V 580A Y3-LI, Gate Charge (Qg) (Max) @ Vgs: 2750 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: Y3-Li, Vgs(th) (Max) @ Id: 4V @ 50mA, Rds On (Max) @ Id, Vgs: 3.8mOhm @ 430A, 10V, Current - Continuous Drain (Id) @ 25°C: 580A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: Y3-Li, Packaging: Bulk.
Weitere Produktangebote VMO580-02F
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VMO580-02F | Hersteller : IXYS |
Description: MOSFET N-CH 200V 580A Y3-LI Gate Charge (Qg) (Max) @ Vgs: 2750 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: Y3-Li Vgs(th) (Max) @ Id: 4V @ 50mA Rds On (Max) @ Id, Vgs: 3.8mOhm @ 430A, 10V Current - Continuous Drain (Id) @ 25°C: 580A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Y3-Li Packaging: Bulk |
Produkt ist nicht verfügbar |