VN0109N3-G Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 164+ | 1.07 EUR |
| 179+ | 0.95 EUR |
| 188+ | 0.87 EUR |
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Technische Details VN0109N3-G Microchip Technology
Description: MOSFET N-CH 90V 350MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V, Drain to Source Voltage (Vdss): 90 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 2.4V @ 1mA, Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 350mA (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bag.
Weitere Produktangebote VN0109N3-G nach Preis ab 0.9 EUR bis 1.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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VN0109N3-G | Microchip Technology |
Trans MOSFET N-CH Si 90V 0.35A 3-Pin TO-92 Bag |
auf Bestellung 881 Stücke: Lieferzeit 14-21 Tag (e) |
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VN0109N3-G | Microchip Technology |
Trans MOSFET N-CH Si 90V 0.35A 3-Pin TO-92 Bag |
auf Bestellung 758 Stücke: Lieferzeit 14-21 Tag (e) |
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VN0109N3-G | Microchip Technology |
Trans MOSFET N-CH Si 90V 0.35A 3-Pin TO-92 Bag |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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VN0109N3-G | Microchip Technology |
MOSFETs MOSFET N-CHANNEL ENHANCE-MODE 90V |
auf Bestellung 1963 Stücke: Lieferzeit 10-14 Tag (e) |
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VN0109N3-G | Microchip Technology |
Description: MOSFET N-CH 90V 350MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V Drain to Source Voltage (Vdss): 90 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 2.4V @ 1mA Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bag |
auf Bestellung 2844 Stücke: Lieferzeit 10-14 Tag (e) |
|
| VN0109N3-G |
![]() |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 90V 0.35A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 90V 0.35A 3-Pin TO-92 Bag
auf Bestellung 881 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 164+ | 1.07 EUR |
| 179+ | 0.98 EUR |
| 188+ | 0.9 EUR |
| VN0109N3-G |
![]() |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 90V 0.35A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 90V 0.35A 3-Pin TO-92 Bag
auf Bestellung 758 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 147+ | 1.2 EUR |
| 148+ | 1.18 EUR |
| VN0109N3-G |
![]() |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 90V 0.35A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 90V 0.35A 3-Pin TO-92 Bag
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 142+ | 1.25 EUR |
| VN0109N3-G |
![]() |
Hersteller: Microchip Technology
MOSFETs MOSFET N-CHANNEL ENHANCE-MODE 90V
MOSFETs MOSFET N-CHANNEL ENHANCE-MODE 90V
auf Bestellung 1963 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.62 EUR |
| 25+ | 1.37 EUR |
| 100+ | 1.24 EUR |
| VN0109N3-G |
![]() |
Hersteller: Microchip Technology
Description: MOSFET N-CH 90V 350MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bag
Description: MOSFET N-CH 90V 350MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bag
auf Bestellung 2844 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.62 EUR |
| 25+ | 1.37 EUR |
| 100+ | 1.24 EUR |




