VN0606L-G Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 102+ | 1.75 EUR |
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Technische Details VN0606L-G Microchip Technology
Description: MOSFET N-CH 60V 330MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330mA (Tj), Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.
Weitere Produktangebote VN0606L-G nach Preis ab 1.75 EUR bis 2.82 EUR
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VN0606L-G | Microchip Technology |
 Trans MOSFET N-CH Si 60V 0.33A 3-Pin TO-92 Bag |
auf Bestellung 321 Stücke: Lieferzeit 14-21 Tag (e) |
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VN0606L-G | Microchip Technology |
MOSFETs 60V 3Ohm |
auf Bestellung 2806 Stücke: Lieferzeit 10-14 Tag (e) |
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VN0606L-G | Microchip Technology |
Trans MOSFET N-CH Si 60V 0.33A 3-Pin TO-92 Bag |
auf Bestellung 524 Stücke: Lieferzeit 14-21 Tag (e) |
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VN0606L-G | Microchip Technology |
Description: MOSFET N-CH 60V 330MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330mA (Tj) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
auf Bestellung 926 Stücke: Lieferzeit 10-14 Tag (e) |
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VN0606L-G | Microchip Technology |
Trans MOSFET N-CH Si 60V 0.33A 3-Pin TO-92 Bag |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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VN0606L-G | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 330mA; Idm: 1.6A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.33A Pulsed drain current: 1.6A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement Manufacturer standard package: 1000pcs. |
auf Bestellung 524 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| VN0606L-G |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 60V 0.33A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 60V 0.33A 3-Pin TO-92 Bag
auf Bestellung 321 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 102+ | 1.75 EUR |
| VN0606L-G |
|
Hersteller: Microchip Technology
MOSFETs 60V 3Ohm
MOSFETs 60V 3Ohm
auf Bestellung 2806 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.2 EUR |
| 25+ | 1.93 EUR |
| 100+ | 1.82 EUR |
| 500+ | 1.78 EUR |
| VN0606L-G |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 60V 0.33A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 60V 0.33A 3-Pin TO-92 Bag
auf Bestellung 524 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 72+ | 2.49 EUR |
| 100+ | 2.21 EUR |
| 250+ | 2.07 EUR |
| VN0606L-G |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 330MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 330MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 926 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.76 EUR |
| 25+ | 2.3 EUR |
| 100+ | 2.08 EUR |
| VN0606L-G |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 60V 0.33A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 60V 0.33A 3-Pin TO-92 Bag
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 64+ | 2.82 EUR |
| VN0606L-G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 330mA; Idm: 1.6A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.33A
Pulsed drain current: 1.6A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Manufacturer standard package: 1000pcs.
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 330mA; Idm: 1.6A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.33A
Pulsed drain current: 1.6A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Manufacturer standard package: 1000pcs.
auf Bestellung 524 Stücke:
Lieferzeit 14-21 Tag (e)