VN10KN3-G-P013 Microchip Technology
auf Bestellung 1445 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 1.74 EUR |
| 37+ | 1.43 EUR |
| 100+ | 1.31 EUR |
| 1000+ | 1.26 EUR |
| 4000+ | 1.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details VN10KN3-G-P013 Microchip Technology
Description: MOSFET N-CH 60V 310MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310mA (Tj), Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V.
Weitere Produktangebote VN10KN3-G-P013
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
VN10KN3-G-P013 | Hersteller : Microchip Technology |
 Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 Ammo |
Produkt ist nicht verfügbar |
|
| VN10KN3-G-P013 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Pulsed drain current: 1A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
VN10KN3-G-P013 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 60V 310MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Tj) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
Produkt ist nicht verfügbar |
|
| VN10KN3-G-P013 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Pulsed drain current: 1A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced |
Produkt ist nicht verfügbar |