VN10LPSTZ Diodes Incorporated

Description: MOSFET VMOS N-CHAN TO92-3, Packaging: Tape & Box (TB), Package / Case: E-Line-3, Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270mA (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, Power Dissipation (Max): 625mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: E-Line (TO-92 compatible), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V.