VN2106N3-G

VN2106N3-G Microchip Technology


vn2106.pdf
Hersteller: Microchip Technology
MOSFETs 60V 4Ohm
auf Bestellung 2919 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.76 EUR
25+0.64 EUR
100+0.56 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details VN2106N3-G Microchip Technology

Description: MOSFET N-CH 60V 300MA TO92-3, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bag, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 2.4V @ 1mA, Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 300mA (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).

Weitere Produktangebote VN2106N3-G nach Preis ab 0.56 EUR bis 0.76 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
VN2106N3-G VN2106N3-G Microchip Technology vn2106.pdf Description: MOSFET N-CH 60V 300MA TO92-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bag
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 2686 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
28+0.63 EUR
100+0.56 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
VN2106N3-G vn2106.pdf
VN2106N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 300MA TO92-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bag
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 2686 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
28+0.63 EUR
100+0.56 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH