VN2410L-G-P014 Microchip Technology
auf Bestellung 1896 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.15 EUR |
| 25+ | 1.78 EUR |
| 100+ | 1.64 EUR |
| 1000+ | 1.52 EUR |
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Technische Details VN2410L-G-P014 Microchip Technology
Description: MOSFET N-CH 240V 190MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 190mA (Tj), Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 240 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V.
Weitere Produktangebote VN2410L-G-P014
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VN2410L-G-P014 | Hersteller : Microchip Technology |
 Trans MOSFET N-CH Si 240V 0.19A 3-Pin TO-92 Ammo |
Produkt ist nicht verfügbar |
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VN2410L-G-P014 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 240V 190MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Tj) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V |
Produkt ist nicht verfügbar |