VN2450N8-G Microchip
Produktcode: 132674
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Lieblingsprodukt
Hersteller: Microchip
Gehäuse: SOT-89
Drain-Source-Spannung Uds, V: 500 V
Drain-Strom Idd, A: 0,5 A
Durchlasswiderstand Rds(on), Ohm: 13 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 150/
Montage: SMD
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Weitere Produktangebote VN2450N8-G nach Preis ab 2.03 EUR bis 2.78 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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VN2450N8-G | Microchip Technology |
Description: MOSFET N-CH 500V 250MA TO243AAPackaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) Rds On (Max) @ Id, Vgs: 13Ohm @ 400mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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VN2450N8-G | Microchip Technology |
MOSFETs 500V 13Ohm |
auf Bestellung 1077 Stücke: Lieferzeit 10-14 Tag (e) |
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VN2450N8-G | Microchip Technology |
Description: MOSFET N-CH 500V 250MA TO243AAPackaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) Rds On (Max) @ Id, Vgs: 13Ohm @ 400mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
auf Bestellung 4439 Stücke: Lieferzeit 10-14 Tag (e) |
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VN2450N8-G | MICROCHIP TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 250mA; Idm: 0.75A; 1.6W Case: SOT89-3 Mounting: SMD Kind of package: reel; tape Manufacturer standard package: 2000pcs. On-state resistance: 13Ω Pulsed drain current: 0.75A Power dissipation: 1.6W Polarisation: unipolar Drain current: 0.25A Kind of channel: enhancement Drain-source voltage: 500V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
auf Bestellung 505 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| VN2450N8-G |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 250MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 13Ohm @ 400mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: MOSFET N-CH 500V 250MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 13Ohm @ 400mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 2.11 EUR |
| VN2450N8-G |
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Hersteller: Microchip Technology
MOSFETs 500V 13Ohm
MOSFETs 500V 13Ohm
auf Bestellung 1077 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.7 EUR |
| 25+ | 2.26 EUR |
| 2000+ | 2.03 EUR |
| VN2450N8-G |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 250MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 13Ohm @ 400mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: MOSFET N-CH 500V 250MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 13Ohm @ 400mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 4439 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.78 EUR |
| 25+ | 2.32 EUR |
| 100+ | 2.11 EUR |
| VN2450N8-G |
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Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 250mA; Idm: 0.75A; 1.6W
Case: SOT89-3
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 2000pcs.
On-state resistance: 13Ω
Pulsed drain current: 0.75A
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: 0.25A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 250mA; Idm: 0.75A; 1.6W
Case: SOT89-3
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 2000pcs.
On-state resistance: 13Ω
Pulsed drain current: 0.75A
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: 0.25A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
auf Bestellung 505 Stücke:
Lieferzeit 14-21 Tag (e)




