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Technische Details VN3205N3-G Microchip Technology
Description: MOSFET N-CH 50V 1.2A TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 2.4V @ 10mA, Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bag.
Weitere Produktangebote VN3205N3-G nach Preis ab 1.93 EUR bis 17.88 EUR
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VN3205N3-G | Hersteller : Microchip Technology |
 Description: MOSFET N-CH 50V 1.2A TO92-3Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 2.4V @ 10mA Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bag |
auf Bestellung 834 Stücke: Lieferzeit 10-14 Tag (e) |
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VN3205N3-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 1.2A; Idm: 8A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 1.2A Pulsed drain current: 8A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |