VNS1NV04DPTR-E STMicroelectronics
Hersteller: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 250mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.3 EUR |
| 5000+ | 1.26 EUR |
| 7500+ | 1.25 EUR |
| 12500+ | 1.24 EUR |
Produktrezensionen
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Technische Details VNS1NV04DPTR-E STMicroelectronics
Description: STMICROELECTRONICS - VNS1NV04DPTR-E - Leistungs-MOSFET, n-Kanal, 45 V, 1.7 A, 0.25 ohm, SOIC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 45V, rohsCompliant: YES, Dauer-Drainstrom Id: 1.7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, Gate-Source-Schwellenspannung, max.: 500mV, Verlustleistung: 4W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: No, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: -, Rds(on)-Prüfspannung: 5V, Drain-Source-Durchgangswiderstand: 0.25ohm.
Weitere Produktangebote VNS1NV04DPTR-E nach Preis ab 1.38 EUR bis 3.12 EUR
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VNS1NV04DPTR-E | STMicroelectronics |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 1.7A; Ch: 2; SMD; SO8; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.7A Number of channels: 2 Mounting: SMD Case: SO8 On-state resistance: 0.33Ω Output voltage: 40V Kind of package: reel; tape |
auf Bestellung 2295 Stücke: Lieferzeit 14-21 Tag (e) |
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VNS1NV04DPTR-E | STMicroelectronics |
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 250mOhm (Max) Input Type: Non-Inverting Voltage - Load: 36V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.7A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
auf Bestellung 15740 Stücke: Lieferzeit 10-14 Tag (e) |
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VNS1NV04DPTR-E | STMicroelectronics |
Gate Drivers OMNIFET POWER MOSFET 40V 1.7 A |
auf Bestellung 7676 Stücke: Lieferzeit 10-14 Tag (e) |
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VNS1NV04DPTR-E | STMICROELECTRONICS |
Description: STMICROELECTRONICS - VNS1NV04DPTR-E - Leistungs-MOSFET, n-Kanal, 45 V, 1.7 A, 0.25 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 45V rohsCompliant: YES Dauer-Drainstrom Id: 1.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 500mV Verlustleistung: 4W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: - Rds(on)-Prüfspannung: 5V Drain-Source-Durchgangswiderstand: 0.25ohm |
auf Bestellung 13515 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| VNS1NV04DPTR-E | ST |
Transistor 2xOMNI-FET; 40V; 500mOhm; 1,7A; 4W; -55°C ~ 150°C; Equivalent: VNS1NV04DP-E; VNS1NV04D; VNS1NV04D13TR VNS1NV04DPTR-E TVNS1nv04d Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| VNS1NV04DPTR-E |
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Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.7A; Ch: 2; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.7A
Number of channels: 2
Mounting: SMD
Case: SO8
On-state resistance: 0.33Ω
Output voltage: 40V
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.7A; Ch: 2; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.7A
Number of channels: 2
Mounting: SMD
Case: SO8
On-state resistance: 0.33Ω
Output voltage: 40V
Kind of package: reel; tape
auf Bestellung 2295 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 1.89 EUR |
| VNS1NV04DPTR-E |
|
Hersteller: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 250mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 250mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 15740 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.64 EUR |
| 11+ | 1.92 EUR |
| 25+ | 1.74 EUR |
| 100+ | 1.55 EUR |
| 250+ | 1.45 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.38 EUR |
| VNS1NV04DPTR-E |
|
Hersteller: STMicroelectronics
Gate Drivers OMNIFET POWER MOSFET 40V 1.7 A
Gate Drivers OMNIFET POWER MOSFET 40V 1.7 A
auf Bestellung 7676 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.67 EUR |
| 10+ | 1.95 EUR |
| 25+ | 1.76 EUR |
| 100+ | 1.56 EUR |
| 250+ | 1.46 EUR |
| 500+ | 1.4 EUR |
| 1000+ | 1.39 EUR |
| VNS1NV04DPTR-E |
|
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - VNS1NV04DPTR-E - Leistungs-MOSFET, n-Kanal, 45 V, 1.7 A, 0.25 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 45V
rohsCompliant: YES
Dauer-Drainstrom Id: 1.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 500mV
Verlustleistung: 4W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: -
Rds(on)-Prüfspannung: 5V
Drain-Source-Durchgangswiderstand: 0.25ohm
Description: STMICROELECTRONICS - VNS1NV04DPTR-E - Leistungs-MOSFET, n-Kanal, 45 V, 1.7 A, 0.25 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 45V
rohsCompliant: YES
Dauer-Drainstrom Id: 1.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 500mV
Verlustleistung: 4W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: -
Rds(on)-Prüfspannung: 5V
Drain-Source-Durchgangswiderstand: 0.25ohm
auf Bestellung 13515 Stücke:
Lieferzeit 14-21 Tag (e)
| VNS1NV04DPTR-E |
|
Hersteller: ST
Transistor 2xOMNI-FET; 40V; 500mOhm; 1,7A; 4W; -55°C ~ 150°C; Equivalent: VNS1NV04DP-E; VNS1NV04D; VNS1NV04D13TR VNS1NV04DPTR-E TVNS1nv04d
Anzahl je Verpackung: 10 Stücke
Transistor 2xOMNI-FET; 40V; 500mOhm; 1,7A; 4W; -55°C ~ 150°C; Equivalent: VNS1NV04DP-E; VNS1NV04D; VNS1NV04D13TR VNS1NV04DPTR-E TVNS1nv04d
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 3.12 EUR |