VP2450N3-G Microchip Technology
auf Bestellung 1050 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 63+ | 2.5 EUR |
| 250+ | 2.16 EUR |
| 500+ | 1.98 EUR |
| 1000+ | 1.82 EUR |
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Technische Details VP2450N3-G Microchip Technology
Description: MOSFET P-CH 500V 100MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Tj), Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 10V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V.
Weitere Produktangebote VP2450N3-G nach Preis ab 2.2 EUR bis 3.34 EUR
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,TO-226_straightlead.jpg "VP2450N3-G") |
VP2450N3-G | Hersteller : Microchip Technology |
 Description: MOSFET P-CH 500V 100MA TO92-3Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Tj) Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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VP2450N3-G | Hersteller : Microchip Technology |
MOSFET 500V 30Ohm |
auf Bestellung 975 Stücke: Lieferzeit 10-14 Tag (e) |
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VP2450N3-G | Hersteller : Microchip Technology |
Trans MOSFET P-CH Si 500V 0.1A 3-Pin TO-92 Bag |
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VP2450N3-G | Hersteller : Microchip Technology |
Trans MOSFET P-CH Si 500V 0.1A 3-Pin TO-92 Bag |
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VP2450N3-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -100mA; Idm: -0.3A; 740mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -0.1A Pulsed drain current: -0.3A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 30Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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VP2450N3-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -100mA; Idm: -0.3A; 740mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -0.1A Pulsed drain current: -0.3A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 30Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced |
Produkt ist nicht verfügbar |