Technische Details VQ2001P SIG
Description: MOSFET 4P-CH 30V 0.6A 14DIP, Packaging: Tube, Configuration: 4 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 600mA, Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V, Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V, Vgs(th) (Max) @ Id: 4.5V @ 1mA.
Weitere Produktangebote VQ2001P
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| VQ2001P | Vishay Siliconix |
 Description: MOSFET 4P-CH 30V 0.6A 14DIPPackaging: Tube Configuration: 4 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 600mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V Vgs(th) (Max) @ Id: 4.5V @ 1mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| VQ2001P |
|
Hersteller: Vishay Siliconix
Description: MOSFET 4P-CH 30V 0.6A 14DIP
Packaging: Tube
Configuration: 4 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Description: MOSFET 4P-CH 30V 0.6A 14DIP
Packaging: Tube
Configuration: 4 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH