Technische Details VQ2001P VISHAY
Description: MOSFET 4P-CH 30V 0.6A 14DIP, Packaging: Tube, Configuration: 4 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 600mA, Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V, Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V, Vgs(th) (Max) @ Id: 4.5V @ 1mA.
Weitere Produktangebote VQ2001P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| VQ2001P | Hersteller : SIG |
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auf Bestellung 80 Stücke: Lieferzeit 21-28 Tag (e) |
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VQ2001P | Hersteller : Vishay |
Trans MOSFET P-CH Si 30V 0.6A 14-Pin PDIP |
Produkt ist nicht verfügbar |
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| VQ2001P | Hersteller : Vishay Siliconix |
Description: MOSFET 4P-CH 30V 0.6A 14DIP Packaging: Tube Configuration: 4 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 600mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V Vgs(th) (Max) @ Id: 4.5V @ 1mA |
Produkt ist nicht verfügbar |