VS-100MT060WSP Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 107A 403W MTP
Power - Max: 403 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 107 A
Part Status: Obsolete
Supplier Device Package: MTP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.49V @ 15V, 60A
Operating Temperature: 150°C (TJ)
Configuration: Single
Input: Single Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V
Current - Collector Cutoff (Max): 100 µA
Mounting Type: Through Hole
Package / Case: 12-MTP Module
Packaging: Tube
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Technische Details VS-100MT060WSP Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 107A 403W MTP, Power - Max: 403 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 107 A, Part Status: Obsolete, Supplier Device Package: MTP, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.49V @ 15V, 60A, Operating Temperature: 150°C (TJ), Configuration: Single, Input: Single Phase Bridge Rectifier, Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V, Current - Collector Cutoff (Max): 100 µA, Mounting Type: Through Hole, Package / Case: 12-MTP Module, Packaging: Tube.
Weitere Produktangebote VS-100MT060WSP
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| VS-100MT060WSP | Hersteller : Vishay Semiconductors | IGBT Modules Output & SW Modules - MTP SWITCH-e3 |
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