VS-10ETF10S-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produktrezensionen
Produktbewertung abgeben
Technische Details VS-10ETF10S-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO263AB, Current - Reverse Leakage @ Vr: 100 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 10A, Technology: Standard, Reverse Recovery Time (trr): 310 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Weitere Produktangebote VS-10ETF10S-M3 nach Preis ab 2.01 EUR bis 5.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-10ETF10S-M3 | Vishay Semiconductors |
Schottky Diodes & Rectifiers New Input Diodes - D2PAK-e3 |
auf Bestellung 2920 Stücke: Lieferzeit 10-14 Tag (e) |
|
| VS-10ETF10S-M3 |
![]() |
Hersteller: Vishay Semiconductors
Schottky Diodes & Rectifiers New Input Diodes - D2PAK-e3
Schottky Diodes & Rectifiers New Input Diodes - D2PAK-e3
auf Bestellung 2920 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.4 EUR |
| 10+ | 2.81 EUR |
| 100+ | 2.49 EUR |
| 500+ | 2.03 EUR |
| 1000+ | 2.01 EUR |


