VS-10ETS10S-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Technische Details VS-10ETS10S-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO263AB, Current - Reverse Leakage @ Vr: 50 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 10A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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VS-10ETS10S-M3 | Vishay Semiconductors |
Rectifiers New Input Diodes - D2PAK-e3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| VS-10ETS10S-M3 |
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Hersteller: Vishay Semiconductors
Rectifiers New Input Diodes - D2PAK-e3
Rectifiers New Input Diodes - D2PAK-e3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH