VS-10ETS12SLHM3 Vishay General Semiconductor - Diodes Division


vs-10ets12slhm3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+1.31 EUR
Mindestbestellmenge: 800 Stücke
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Technische Details VS-10ETS12SLHM3 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 1.2KV 10A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -40°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V, Qualification: AEC-Q101.

Weitere Produktangebote VS-10ETS12SLHM3 nach Preis ab 1.39 EUR bis 3.57 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
VS-10ETS12SLHM3 VS-10ETS12SLHM3 Vishay General Semiconductor - Diodes Division vs-10ets12slhm3.pdf Description: DIODE GEN PURP 1.2KV 10A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1127 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.47 EUR
10+2.35 EUR
100+1.67 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-10ETS12SLHM3 VS-10ETS12SLHM3 Vishay Semiconductors vs-10ets12slhm3.pdf Rectifiers 10A If; 1200V Vr TO-263AB (D2PAK)
auf Bestellung 1339 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.57 EUR
10+2.41 EUR
100+1.76 EUR
500+1.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
VS-10ETS12SLHM3 vs-10ets12slhm3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1127 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.47 EUR
10+2.35 EUR
100+1.67 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-10ETS12SLHM3 vs-10ets12slhm3.pdf
Hersteller: Vishay Semiconductors
Rectifiers 10A If; 1200V Vr TO-263AB (D2PAK)
auf Bestellung 1339 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.57 EUR
10+2.41 EUR
100+1.76 EUR
500+1.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH