Technische Details VS-15ETL06STRLPBF Vishay Semiconductors
Description: DIODE GEN PURP 600V 15A TO263AB, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 50 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A, Voltage - DC Reverse (Vr) (Max): 600 V, Grade: Automotive, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 15A, Technology: Standard, Reverse Recovery Time (trr): 29 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote VS-15ETL06STRLPBF
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VS-15ETL06STRLPBF | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 600V 15A TO263ABQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 15A Technology: Standard Reverse Recovery Time (trr): 29 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
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