VS-1EFH01-M3/I Vishay Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.6 EUR |
| 10+ | 0.38 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.15 EUR |
| 5000+ | 0.14 EUR |
| 10000+ | 0.13 EUR |
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Technische Details VS-1EFH01-M3/I Vishay Semiconductors
Description: DIODE GEN PURP 100V 1A DO219AB, Supplier Device Package: DO-219AB (SMF), Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 16 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 2 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C.
Weitere Produktangebote VS-1EFH01-M3/I nach Preis ab 0.15 EUR bis 0.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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VS-1EFH01-M3/I | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 100V 1A DO219ABCurrent - Reverse Leakage @ Vr: 2 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-219AB (SMF) Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 16 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Cut Tape (CT) |
auf Bestellung 3410 Stücke: Lieferzeit 10-14 Tag (e) |
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| VS-1EFH01-M3/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO219AB
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 16 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 100V 1A DO219AB
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 16 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 3410 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 0.67 EUR |
| 50+ | 0.43 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| 2000+ | 0.15 EUR |