Produkte > VISHAY SEMICONDUCTORS > VS-1EFH01-M3/I
VS-1EFH01-M3/I

VS-1EFH01-M3/I Vishay Semiconductors

vs-1efh01-m3.pdf Hersteller: Vishay Semiconductors
Rectifiers Hypfst Rect 1A 100V
auf Bestellung 3450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.5 EUR
10+0.32 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.13 EUR
5000+0.12 EUR
10000+0.11 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details VS-1EFH01-M3/I Vishay Semiconductors

Description: DIODE GEN PURP 100V 1A DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 16 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-219AB (SMF), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A, Current - Reverse Leakage @ Vr: 2 µA @ 100 V.

Weitere Produktangebote VS-1EFH01-M3/I nach Preis ab 0.13 EUR bis 0.56 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
VS-1EFH01-M3/I VS-1EFH01-M3/I Hersteller : Vishay General Semiconductor - Diodes Division vs-1efh01-m3.pdf Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 3410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
50+0.36 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
VS-1EFH01-M3/I VS-1EFH01-M3/I Hersteller : Vishay General Semiconductor - Diodes Division vs-1efh01-m3.pdf Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-1EFH01-M3\I VS-1EFH01-M3\I Hersteller : Vishay Rectifiers Freds - SMF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-1EFH01-M3/I Hersteller : VISHAY vs-1efh01-m3.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 23ns; DO219AB,SMF; Ufmax: 0.8V
Max. forward impulse current: 35A
Max. off-state voltage: 100V
Kind of package: 13 inch reel
Quantity in set/package: 10000pcs.
Case: DO219AB; SMF
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Features of semiconductor devices: ultrafast switching
Capacitance: 5pF
Reverse recovery time: 23ns
Leakage current: 8µA
Max. forward voltage: 0.8V
Load current: 1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH