VS-1EFH02WHM3-18 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 16 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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Technische Details VS-1EFH02WHM3-18 Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO219AB, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 2 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Grade: Automotive, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-219AB (SMF), Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 16 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote VS-1EFH02WHM3-18
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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VS-1EFH02WHM3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO219AB Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-219AB (SMF) Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 16 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| VS-1EFH02WHM3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO219AB
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 16 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Description: DIODE STANDARD 200V 1A DO219AB
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 16 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH