VS-1EFU06-M3/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO219AB
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 32 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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Technische Details VS-1EFU06-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO219AB, Current - Reverse Leakage @ Vr: 3 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DO-219AB (SMF), Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 32 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote VS-1EFU06-M3/I nach Preis ab 0.15 EUR bis 0.69 EUR
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VS-1EFU06-M3/I | Vishay Semiconductors |
Rectifiers If(AV) 1A Vr 600V Fred Pt |
auf Bestellung 39604 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-1EFU06-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO219AB Current - Reverse Leakage @ Vr: 3 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-219AB (SMF) Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 32 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Cut Tape (CT) |
auf Bestellung 68840 Stücke: Lieferzeit 10-14 Tag (e) |
|
| VS-1EFU06-M3/I |
|
Hersteller: Vishay Semiconductors
Rectifiers If(AV) 1A Vr 600V Fred Pt
Rectifiers If(AV) 1A Vr 600V Fred Pt
auf Bestellung 39604 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.58 EUR |
| 10+ | 0.36 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.17 EUR |
| VS-1EFU06-M3/I |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO219AB
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 32 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 1A DO219AB
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 32 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 68840 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 26+ | 0.69 EUR |
| 36+ | 0.5 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.17 EUR |
| 2000+ | 0.15 EUR |