| Anzahl | Preis |
|---|---|
| 1+ | 15.75 EUR |
| 10+ | 13.9 EUR |
| 100+ | 11.81 EUR |
| 500+ | 10.95 EUR |
| 1000+ | 10.28 EUR |
| 2000+ | 9.8 EUR |
| 5000+ | 9.72 EUR |
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Technische Details VS-1N3209 Vishay Semiconductors
Description: DIODE GEN PURP 100V 15A DO203AB, Current - Reverse Leakage @ Vr: 10 mA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-203AB (DO-5), Current - Average Rectified (Io): 15A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis, Stud Mount, Package / Case: DO-203AB, DO-5, Stud, Packaging: Bulk.
Weitere Produktangebote VS-1N3209
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-1N3209 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 100V 15A DO203ABCurrent - Reverse Leakage @ Vr: 10 mA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-203AB (DO-5) Current - Average Rectified (Io): 15A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Packaging: Bulk |
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