auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 16.68 EUR |
| 10+ | 14.19 EUR |
| 200+ | 10.21 EUR |
| 500+ | 9.56 EUR |
| 1000+ | 9.08 EUR |
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Technische Details VS-1N3891 Vishay Semiconductors
Description: DIODE GEN PURP 200V 12A DO203AA, Packaging: Bulk, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Chassis, Stud Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 300 ns, Technology: Standard, Current - Average Rectified (Io): 12A, Supplier Device Package: DO-203AA (DO-4), Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A, Current - Reverse Leakage @ Vr: 25 µA @ 200 V.
Weitere Produktangebote VS-1N3891
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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VS-1N3891 | Hersteller : Vishay |
 Fast Recovery Diodes 12A |
Produkt ist nicht verfügbar |
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VS-1N3891 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 12A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
Produkt ist nicht verfügbar |