Technische Details VS-20ETF02STRR-M3 Vishay
Description: DIODE GEN PURP 200V 20A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 160 ns, Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 200 V.
Weitere Produktangebote VS-20ETF02STRR-M3
Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-20ETF02STRR-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
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VS-20ETF02STRR-M3 | Hersteller : Vishay Semiconductors |
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VS-20ETF02STRR-M3 | Hersteller : VISHAY |
![]() Description: Diode: rectifying; SMD; 200V; 20A; D2PAK,TO263AB; 13 inch reel Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 20A Semiconductor structure: single diode Case: D2PAK; TO263AB Kind of package: 13 inch reel Quantity in set/package: 800pcs. Features of semiconductor devices: fast switching |
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