VS-20ETF06STRRPBF Vishay Semiconductors

Description: DIODE GEN PURP 600V 20A TO263AB, Current - Reverse Leakage @ Vr: 100 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 20A, Technology: Standard, Reverse Recovery Time (trr): 120 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).