VS-20ETF08STRR-M3 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 800V 20A TO263AB, Current - Reverse Leakage @ Vr: 100 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 800 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-263AB (D²PAK), Current - Average Rectified (Io): 20A, Technology: Standard, Reverse Recovery Time (trr): 400 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).