VS-20ETF12STRRPBF Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Technology: Standard
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
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Technische Details VS-20ETF12STRRPBF Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB, Technology: Standard, Reverse Recovery Time (trr): 95 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 100 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 20A.
Weitere Produktangebote VS-20ETF12STRRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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VS-20ETF12STRRPBF | Vishay Semiconductors |
Rectifiers RECOMMENDED ALT VS-20ETF12STRR-M3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| VS-20ETF12STRRPBF |
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Hersteller: Vishay Semiconductors
Rectifiers RECOMMENDED ALT VS-20ETF12STRR-M3
Rectifiers RECOMMENDED ALT VS-20ETF12STRR-M3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

