Technische Details VS-20ETS16PBF Vishay Semiconductors
Description: DIODE GEN PURP 1.6KV 20A TO220-3, Supplier Device Package: TO-220-3, Current - Average Rectified (Io): 20A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Current - Reverse Leakage @ Vr: 100 µA @ 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1600 V, Operating Temperature - Junction: -40°C ~ 150°C.
Weitere Produktangebote VS-20ETS16PBF
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VS-20ETS16PBF | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 1.6KV 20A TO220-3Supplier Device Package: TO-220-3 Current - Average Rectified (Io): 20A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 1600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Voltage - DC Reverse (Vr) (Max): 1600 V Operating Temperature - Junction: -40°C ~ 150°C |
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