VS-25ETS08S-M3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 6.88 EUR |
| 10+ | 4.54 EUR |
| 100+ | 3.19 EUR |
| 500+ | 2.62 EUR |
| 1000+ | 2.55 EUR |
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Technische Details VS-25ETS08S-M3 Vishay Semiconductors
Description: DIODE GEN PURP 800V 25A TO263AB, Technology: Standard, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tube, Current - Reverse Leakage @ Vr: 100 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A, Voltage - DC Reverse (Vr) (Max): 800 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-263AB (D²PAK), Current - Average Rectified (Io): 25A.
Weitere Produktangebote VS-25ETS08S-M3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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VS-25ETS08S-M3 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 800V 25A TO263ABTechnology: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D²PAK) Current - Average Rectified (Io): 25A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| VS-25ETS08S-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 25A TO263AB
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 25A
Description: DIODE GEN PURP 800V 25A TO263AB
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 25A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH