Produkte > VISHAY SEMICONDUCTORS > VS-2EGH02HM3_A/I

VS-2EGH02HM3_A/I Vishay Semiconductors


vs-2egh02hm3.pdf
Hersteller: Vishay Semiconductors
Rectifiers Freds 200V - SMB-e3
auf Bestellung 1521 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+0.75 EUR
10+0.65 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.29 EUR
2500+0.25 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details VS-2EGH02HM3_A/I Vishay Semiconductors

Description: DIODE GEN PURP 200V 2A DO214AA, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 200 V, Grade: Automotive, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-214AA (SMB), Current - Average Rectified (Io): 2A, Technology: Standard, Reverse Recovery Time (trr): 25 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AA, SMB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 2 µA @ 200 V.

Weitere Produktangebote VS-2EGH02HM3_A/I nach Preis ab 0.29 EUR bis 0.76 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
VS-2EGH02HM3_A/I VS-2EGH02HM3_A/I Vishay General Semiconductor - Diodes Division vs-2egh02hm3.pdf Description: DIODE GEN PURP 200V 2A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
28+0.65 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.29 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-2EGH02HM3_A/I vs-2egh02hm3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
24+0.76 EUR
28+0.65 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.29 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH