VS-3C06ET07S2L-M3 VISHAY
Hersteller: VISHAY
Description: VISHAY - VS-3C06ET07S2L-M3 - SiC-Schottky-Diode, Einfach, 650 V, 6 A, 17 nC, TO-263AB (D2PAK)
tariffCode: 85411000
Bauform - Diode: TO-263AB (D2PAK)
Kapazitive Gesamtladung: 17nC
rohsCompliant: Y-EX
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 6A
euEccn: NLR
Anzahl der Pins: 2 Pins
Produktpalette: -
productTraceability: No
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
SVHC: Lead (21-Jan-2025)
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Technische Details VS-3C06ET07S2L-M3 VISHAY
Description: 650 V POWER SIC GEN 3 MERGED PIN, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 255pF @ 1V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A, Current - Reverse Leakage @ Vr: 35 µA @ 650 V.
Weitere Produktangebote VS-3C06ET07S2L-M3 nach Preis ab 2.26 EUR bis 7.2 EUR
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VS-3C06ET07S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: 650 V POWER SIC GEN 3 MERGED PIN Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 255pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 35 µA @ 650 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-3C06ET07S2L-M3 | Vishay Semiconductors |
SiC Schottky Diodes RECT 650V 6A SM POWER SIC |
auf Bestellung 1269 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-3C06ET07S2L-M3 | Vishay General Semiconductor - Diodes Division |
Description: 650 V POWER SIC GEN 3 MERGED PIN Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 255pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 35 µA @ 650 V |
auf Bestellung 1598 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-3C06ET07S2L-M3 | VISHAY |
Description: VISHAY - VS-3C06ET07S2L-M3 - SiC-Schottky-Diode, Einfach, 650 V, 6 A, 17 nC, TO-263AB (D2PAK) tariffCode: 85411000 Bauform - Diode: TO-263AB (D2PAK) Kapazitive Gesamtladung: 17nC rohsCompliant: Y-EX Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 6A euEccn: NLR Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Periodische Spitzensperrspannung: 650V Betriebstemperatur, max.: 175°C SVHC: Lead (21-Jan-2025) |
auf Bestellung 759 Stücke: Lieferzeit 14-21 Tag (e) |
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| VS-3C06ET07S2L-M3 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 4.28 EUR |
| VS-3C06ET07S2L-M3 |
|
Hersteller: Vishay Semiconductors
SiC Schottky Diodes RECT 650V 6A SM POWER SIC
SiC Schottky Diodes RECT 650V 6A SM POWER SIC
auf Bestellung 1269 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.58 EUR |
| 10+ | 4.3 EUR |
| 100+ | 3.01 EUR |
| 500+ | 2.31 EUR |
| 800+ | 2.26 EUR |
| VS-3C06ET07S2L-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
auf Bestellung 1598 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.64 EUR |
| 10+ | 5.96 EUR |
| 100+ | 4.88 EUR |
| VS-3C06ET07S2L-M3 |
|
Hersteller: VISHAY
Description: VISHAY - VS-3C06ET07S2L-M3 - SiC-Schottky-Diode, Einfach, 650 V, 6 A, 17 nC, TO-263AB (D2PAK)
tariffCode: 85411000
Bauform - Diode: TO-263AB (D2PAK)
Kapazitive Gesamtladung: 17nC
rohsCompliant: Y-EX
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 6A
euEccn: NLR
Anzahl der Pins: 2 Pins
Produktpalette: -
productTraceability: No
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
SVHC: Lead (21-Jan-2025)
Description: VISHAY - VS-3C06ET07S2L-M3 - SiC-Schottky-Diode, Einfach, 650 V, 6 A, 17 nC, TO-263AB (D2PAK)
tariffCode: 85411000
Bauform - Diode: TO-263AB (D2PAK)
Kapazitive Gesamtladung: 17nC
rohsCompliant: Y-EX
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 6A
euEccn: NLR
Anzahl der Pins: 2 Pins
Produktpalette: -
productTraceability: No
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
SVHC: Lead (21-Jan-2025)
auf Bestellung 759 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 7.2 EUR |
| 54+ | 4.37 EUR |
| 100+ | 3.81 EUR |
| 500+ | 3.59 EUR |