VS-3C15ET12T-M3 Vishay Semiconductors
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.21 EUR |
| 10+ | 7.73 EUR |
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Technische Details VS-3C15ET12T-M3 Vishay Semiconductors
Description: 15A 1200V SIC ZERO QRR SINGLE TJ, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Diode Type: Schottky - Single, Speed: No Recovery Time > 500mA (Io), Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 56pF @ 800V, 1MHz, Voltage - Peak Reverse (Max): 1200V, Current - Average Rectified (Io): 15A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Current - Max: 15 A, Power Dissipation (Max): 111 W, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A, Current - Reverse Leakage @ Vr: 75 µA @ 1200 V.
Weitere Produktangebote VS-3C15ET12T-M3 nach Preis ab 7.42 EUR bis 11.21 EUR
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VS-3C15ET12T-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: 15A 1200V SIC ZERO QRR SINGLE TJPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Diode Type: Schottky - Single Speed: No Recovery Time > 500mA (Io) Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 56pF @ 800V, 1MHz Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 15A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Current - Max: 15 A Power Dissipation (Max): 111 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Current - Reverse Leakage @ Vr: 75 µA @ 1200 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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