Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > VS-3C16ET07S2L-M3
VS-3C16ET07S2L-M3

VS-3C16ET07S2L-M3 Vishay General Semiconductor - Diodes Division

vs-3c16et07s2l-m3.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+8.73 EUR
Mindestbestellmenge: 800
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Technische Details VS-3C16ET07S2L-M3 Vishay General Semiconductor - Diodes Division

Description: 650 V POWER SIC GEN 3 MERGED PIN, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 700pF @ 1V, 1MHz, Current - Average Rectified (Io): 16A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A, Current - Reverse Leakage @ Vr: 85 µA @ 650 V.

Weitere Produktangebote VS-3C16ET07S2L-M3 nach Preis ab 6.95 EUR bis 12.97 EUR

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Preis ohne MwSt
VS-3C16ET07S2L-M3 VS-3C16ET07S2L-M3 Hersteller : Vishay Semiconductors vs-3c16et07s2l-m3.pdf Schottky Diodes & Rectifiers SILICON CARBIDE DIODE - D2-PAK
auf Bestellung 1408 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+11.83 EUR
10+ 10.16 EUR
100+ 8.45 EUR
250+ 8.1 EUR
500+ 7.46 EUR
800+ 6.95 EUR
VS-3C16ET07S2L-M3 VS-3C16ET07S2L-M3 Hersteller : Vishay General Semiconductor - Diodes Division vs-3c16et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.97 EUR
10+ 11.71 EUR
100+ 9.7 EUR
Mindestbestellmenge: 2
VS-3C16ET07S2L-M3 Hersteller : Vishay vs-3c16et07s2l-m3.pdf Silicon Carbide diode - D2-PAK
Produkt ist nicht verfügbar
VS-3C16ET07S2L-M3 Hersteller : VISHAY vs-3c16et07s2l-m3.pdf VS-3C16ET07S2L-M3 SMD Schottky diodes
Produkt ist nicht verfügbar