VS-40MT120PHAPBF Vishay Semiconductors
auf Bestellung 166 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 99.46 EUR |
| 10+ | 90.41 EUR |
| 25+ | 88.72 EUR |
| 50+ | 87.05 EUR |
| 105+ | 83 EUR |
| 210+ | 77.88 EUR |
| 525+ | 77.58 EUR |
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Technische Details VS-40MT120PHAPBF Vishay Semiconductors
Description: MTP - HALF BRIDGE IGBT, Packaging: Tube, Package / Case: 12-MTP Module, Mounting Type: Through Hole, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 40A, NTC Thermistor: No, Supplier Device Package: 12-MTP, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 305 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 3.2 nF @ 25 V.
Weitere Produktangebote VS-40MT120PHAPBF nach Preis ab 81.92 EUR bis 100.13 EUR
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VS-40MT120PHAPBF | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: MTP - HALF BRIDGE IGBTPackaging: Tube Package / Case: 12-MTP Module Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 40A NTC Thermistor: No Supplier Device Package: 12-MTP IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 305 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 3.2 nF @ 25 V |
auf Bestellung 116 Stücke: Lieferzeit 10-14 Tag (e) |
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