VS-40MT120PHAPBF Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: MTP - HALF BRIDGE IGBT
Packaging: Tube
Package / Case: 12-MTP Module
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: 12-MTP
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 305 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.2 nF @ 25 V
auf Bestellung 144 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 94.51 EUR |
| 15+ | 70.52 EUR |
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Technische Details VS-40MT120PHAPBF Vishay General Semiconductor - Diodes Division
Description: MTP - HALF BRIDGE IGBT, Packaging: Tube, Package / Case: 12-MTP Module, Mounting Type: Through Hole, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 40A, NTC Thermistor: No, Supplier Device Package: 12-MTP, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 305 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 3.2 nF @ 25 V.
Weitere Produktangebote VS-40MT120PHAPBF nach Preis ab 77.58 EUR bis 99.46 EUR
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VS-40MT120PHAPBF | Hersteller : Vishay Semiconductors |
IGBT Modules MTP - HALF BRIDGE IGBT |
auf Bestellung 140 Stücke: Lieferzeit 10-14 Tag (e) |
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