VS-4EWH02FNTR-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Description: DIODE GEN PURP 200V 4A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.48 EUR |
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Technische Details VS-4EWH02FNTR-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A D-PAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 20 ns, Technology: Standard, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-252AA (DPAK), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A, Current - Reverse Leakage @ Vr: 3 µA @ 200 V.
Weitere Produktangebote VS-4EWH02FNTR-M3 nach Preis ab 0.54 EUR bis 1.88 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-4EWH02FNTR-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 4A D-PAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A Current - Reverse Leakage @ Vr: 3 µA @ 200 V |
auf Bestellung 3433 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-4EWH02FNTR-M3 | Hersteller : Vishay Semiconductors | Rectifiers Hyperfast 4A 200V 23ns |
auf Bestellung 2900 Stücke: Lieferzeit 14-28 Tag (e) |
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VS-4EWH02FNTR-M3 | Hersteller : Vishay | Diode Switching 200V 4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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VS-4EWH02FNTR-M3 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying Type of diode: rectifying |
Produkt ist nicht verfügbar |