VS-6ESU06-M3/86A Vishay Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.99 EUR |
| 10+ | 0.88 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.49 EUR |
| 1500+ | 0.46 EUR |
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Technische Details VS-6ESU06-M3/86A Vishay Semiconductors
Description: DIODE GEN PURP 600V 6A TO277A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: TO-277A (SMPC), Current - Average Rectified (Io): 6A, Technology: Standard, Reverse Recovery Time (trr): 58 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote VS-6ESU06-M3/86A nach Preis ab 1.12 EUR bis 1.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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VS-6ESU06-M3/86A | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 600V 6A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 58 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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| VS-6ESU06-M3/86A |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.27 EUR |
| 19+ | 1.12 EUR |