VS-6ESU06HM3/86A Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 11+ | 1.74 EUR |
| 15+ | 1.18 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.66 EUR |
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Technische Details VS-6ESU06HM3/86A Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 6A TO277A, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: TO-277A (SMPC), Current - Average Rectified (Io): 6A, Technology: Standard, Reverse Recovery Time (trr): 58 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR).
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VS-6ESU06HM3/86A | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 6A TO277A Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 6A Technology: Standard Reverse Recovery Time (trr): 58 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
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