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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.56 EUR |
| 10+ | 7.02 EUR |
| 100+ | 5.68 EUR |
| 500+ | 5.03 EUR |
| 1000+ | 4.49 EUR |
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Technische Details VS-80EBU04HN4 Vishay Semiconductors
Description: DIODE GEN PURP 400V 80A POWERTAB, Packaging: Tube, Package / Case: PowerTab®, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 87 ns, Technology: Standard, Current - Average Rectified (Io): 80A, Supplier Device Package: PowerTab®, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A, Current - Reverse Leakage @ Vr: 50 µA @ 400 V.
Weitere Produktangebote VS-80EBU04HN4
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-80EBU04HN4 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 400V 80A POWERTABPackaging: Tube Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 87 ns Technology: Standard Current - Average Rectified (Io): 80A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A Current - Reverse Leakage @ Vr: 50 µA @ 400 V |
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