VS-8ETH03STRRPBF Vishay Semiconductors
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Technische Details VS-8ETH03STRRPBF Vishay Semiconductors
Description: DIODE STANDARD 300V 8A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 27 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A, Current - Reverse Leakage @ Vr: 20 µA @ 300 V, Qualification: AEC-Q101.
Weitere Produktangebote VS-8ETH03STRRPBF
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VS-8ETH03STRRPBF | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE STANDARD 300V 8A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 27 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A Current - Reverse Leakage @ Vr: 20 µA @ 300 V Qualification: AEC-Q101 |
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