VS-8EWX06FN-M3 Vishay Semiconductors
auf Bestellung 4530 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.97 EUR |
| 10+ | 0.98 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.70 EUR |
| 3000+ | 0.68 EUR |
| 6000+ | 0.67 EUR |
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Technische Details VS-8EWX06FN-M3 Vishay Semiconductors
Description: DIODE GEN PURP 600V 8A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 17 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252AA (DPAK), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Weitere Produktangebote VS-8EWX06FN-M3 nach Preis ab 0.89 EUR bis 2.01 EUR
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VS-8EWX06FN-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 600V 8A TO252Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 17 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
auf Bestellung 517 Stücke: Lieferzeit 10-14 Tag (e) |
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