VS-C40CP07L-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 650V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1040pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.66 EUR |
| 25+ | 21.6 EUR |
| 100+ | 20.33 EUR |
| 500+ | 18.42 EUR |
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Technische Details VS-C40CP07L-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 650V 20A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1040pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Weitere Produktangebote VS-C40CP07L-M3 nach Preis ab 17.17 EUR bis 29.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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VS-C40CP07L-M3 | Vishay Semiconductors | SiC Schottky Diodes Si CARBIDE DIODE |
auf Bestellung 626 Stücke: Lieferzeit 10-14 Tag (e) |
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| VS-C40CP07L-M3 |
Hersteller: Vishay Semiconductors
SiC Schottky Diodes Si CARBIDE DIODE
SiC Schottky Diodes Si CARBIDE DIODE
auf Bestellung 626 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 29.95 EUR |
| 10+ | 24.38 EUR |
| 100+ | 20.29 EUR |
| 500+ | 18.1 EUR |
| 1000+ | 17.17 EUR |