VS-E4PU3006L-N3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 461 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 3.1 EUR |
| 100+ | 2.56 EUR |
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Technische Details VS-E4PU3006L-N3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AD, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 65 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-247AD, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Weitere Produktangebote VS-E4PU3006L-N3 nach Preis ab 3.17 EUR bis 4.63 EUR
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VS-E4PU3006L-N3 | Hersteller : Vishay Semiconductors |
Rectifiers 600V 30A FRED Pt TO-247 LL 2L |
auf Bestellung 439 Stücke: Lieferzeit 14-28 Tag (e) |
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VS-E4PU3006L-N3 | Hersteller : Vishay |
Rectifier Diode Switching 600V 30A 65ns 2-Pin(2+Tab) TO-247AD Tube |
Produkt ist nicht verfügbar |
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| VS-E4PU3006L-N3 | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 240A; TO247AD-2; 65ns Mounting: THT Case: TO247AD-2 Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.6kV Max. forward voltage: 1.6V Load current: 30A Semiconductor structure: single diode Reverse recovery time: 65ns Max. forward impulse current: 240A |
Produkt ist nicht verfügbar |